Here, the authors demonstrate a high-energy-density and radiation-tolerant capacitor by constructing a dendritic-like structured ferroelectric embedded in an insulator.
Lead-free ferroelectric BMT-based film capacitors are successfully prepared on flexible mica substrate. The ultrahigh energy storage density is obtained by reducing
The development of dielectric thin film capacitors that combine high energy storage capability with environmental benignity has become a key technological direction for
Relaxor ferroelectrics have been intensively studied during the past two decades for capacitive energy storage in modern electronics and electrical power systems. However,
This review starts with a brief introduction of different energy storage devices and current advances of dielectric capacitors in PPT. The latest developments on lead-free RFEs
Dielectric film capacitors have drawn much attention in recent years due to the fast charge–discharge rate, while the energy storage performance at ultra-high temperature
Dielectric capacitors offer high-power delivery materials for energy-storage, yet suffer from low energy densities. Here, the authors
Dielectric-based energy storage capacitors characterized with fast charging and discharging speed and reliability1–4 play a vital role in cutting-edge electrical and electronic
The improved energy storage capability was attributed to reasonably-designed sandwich-like nanofiller: the formation of rGO micro-capacitors raised the dielectric constant of
Volume and surface-area recoverable energy-storage densities for some representative dielectric capacitors in bulk, thick-film, and thin-film
The work offers a good strategy via creating a phase boundary for improving the energy storage performance in the BaTiO 3-based relaxor ferroelectric films for advanced
To explore novel properties with avoiding deleterious effects for oxide epitaxial thin films, which are applied in nanoscale microelectronic devices such as non-volatile
Ferroelectric thin film devices offer opportunities for energy storage needs under finite electric fields due to their intrinsically large polarization and the advantage of small size.
Dielectric capacitors are thus playing an ever-increasing role in electronic devices and electrical power systems. However, the relatively low
This review focuses on Pb - free relaxor ferroelectric (RFE) and antiferroelectric (AFE) thin films for energy storage applications. It begins by discussing the potential of
Utilizing ferroelectric polarization differences in energy-storage thin film capacitors Xinxing Hao a, Zhe Zhu a b, Zhonghua Yao a c, Hua Hao a c, Minghe Cao a,
Several experimental approaches, such as design of novel micro-/nanostructures, chemical modification, and optimization of the deposition method, are discussed and
This discovery represents a significant advancement for the high-density integration of memory, logic and energy storage devices with low energy consumption.
In recent years, several innovative strategies have been proposed to enhance the energy storage performance of ferroelectric thin films, primarily through multidimensional approaches such as
High energy-storage density under low electric field in lead-free relaxor ferroelectric film based on synergistic effect of multiple polar structures Ningning Sun a, Yong
This review aims to provide a comprehensive summary of polymer dielectric films and capacitors in recent years. We compare and summarize the pros and cons of film
Although electrical energy is known to be maintained by the charging capacitor, the energy storage effect on ferroelectric microstructure has been rarely explored for the
Next-generation advanced high/pulsed power capacitors rely heavily on dielectric ceramics with high energy storage performance. Although high entropy relaxor
Dielectric electrostatic capacitors 1, because of their ultrafast charge–discharge, are desirable for high-power energy storage applications. Along with ultrafast operation, on
Optimizing dielectric energy storage often involves increasing ferroelectric polarization and breakdown strength while delaying polarization saturation. Here, we
In the case of thin-film dielectric energy storage capacitors, the bottom electrodes can also influence the orientation and microstructure, and hence the EBD and Ur
Materials offering high energy density are currently desired to meet the increasing demand for energy storage applications, such as pulsed
Regarding dielectric capacitors, this review provides a detailed introduction to the classification, advantages and disadvantages, structure,
Ultra-thin ferroelectric films with uniform, conformal, and controllable thickness are promising for advancement in technology of future ferroelectric-based devices. Most well
Advances in flexible electronics are driving the development of ferroelectric thin-film capacitors toward flexibility and high energy storage performance.
In recent years, several innovative strategies have been proposed to enhance the energy storage performance of ferroelectric thin films, primarily through multidimensional approaches such as element doping, solid solution formation, and bandgap engineering.
Thin film capacitors have garnered extensive attention and research due to their robust breakdown strength, miniaturization, and substantial energy storage density. Ferroelectric oxide thin film capacitors are widely employed in commercial capacitors.
Pan, H. et al. Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering. Nat. Commun. 9, 1813 (2018). Chen, X. et al. Giant energy storage density in lead-free dielectric thin films deposited on Si wafers with an artificial dead-layer. Nano Energy 78, 105390 (2020).
A brief overview on ferroelectrics for energy storage applications has been given in the previous sections. Great progresses have been made in ferroelectric polymer capacitors, ferroelectric oxide capacitors, and antiferroelectric thin film capacitors.
Integration of ferroelectric films onto base metal thin foils increases volumetric capacitance through the elimination of a thick inactive substrate (such as Si), promoting the device miniaturization and compactness.
